公开(公告)号：US09792990B2

公开(公告)日：2017-10-17

申请号：US14459736

申请日：2014-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongjune Kim ,  Hong Rak Son ,  Seonghyeog Choi ,  Junjin Kong

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  H01L27/1157 ,  H01L27/11582

CPC classification number: G11C16/10 ,  G11C16/0483 ,  H01L27/1157 ,  H01L27/11582

Abstract: Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.