公开(公告)号：US11700726B2

公开(公告)日：2023-07-11

申请号：US17165539

申请日：2021-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Kim ,  Jun Kwan Kim ,  Woo Choel Noh ,  Kyoung-Hee Kim ,  Ik Soo Kim ,  Yong Jin Shin

IPC: H10B12/00 ,  H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10897

Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.