公开(公告)号：US20210232330A1

公开(公告)日：2021-07-29

申请号：US17019429

申请日：2020-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yohan KO ,  Dong-Uk KIM ,  Insoon JO ,  Jooyoung HWANG

IPC: G06F3/06

Abstract: A storage device includes a first interface, an operation circuit, and a nonvolatile memory. The first interface receives a first data chunk from a host device. The operation circuit generates first processed data by processing the first data chunk and generates a first signal indicating a size of the first processed data. The nonvolatile memory stores the first processed data in a storage location, when the storage location at which the first processed data are to be stored is designated to the storage device based on the first signal. The first interface outputs the first signal to the host device.