公开(公告)号：US11133249B2

公开(公告)日：2021-09-28

申请号：US16877088

申请日：2020-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonggil Kim ,  Jongmin Baek ,  Wookyung You ,  Kyuhee Han

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a contact structure connected to an active region. A first insulating layer is disposed on a barrier dielectric layer and has a first hole connected to the contact structure. A second insulating layer is disposed on the first insulating layer and has a trench connected to the first hole. The second insulating layer has an extended portion along a side wall of the first hole. A width of the first hole less the space occupied by the extended portion is defined as a second hole. A wiring structure including a conductive material is connected to the contact structure. A conductive barrier is disposed between the conductive material and the first and second insulating layers. An etch stop layer is disposed between the first and second insulating layers and between the extended portion of the second insulating layer and a side wall of the first hole.