INTERPOSER AND SEMICONDUCTOR PACKAGE INCLUDING SAME

    公开(公告)号:US20220013445A1

    公开(公告)日:2022-01-13

    申请号:US17154067

    申请日:2021-01-21

    Abstract: An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.

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