公开(公告)号：US20230016020A1

公开(公告)日：2023-01-19

申请号：US17939387

申请日：2022-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG GEUN KIM ,  KEUNSAN PARK ,  SANGYOON OH ,  BYUNG-KI LEE ,  YONGHWA LEE ,  JOOYOUNG HWANG

IPC: G06F3/06

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

公开(公告)号：US20210216220A1

公开(公告)日：2021-07-15

申请号：US17076619

申请日：2020-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNG GEUN KIM ,  KEUNSAN PARK ,  SANGYOON OH ,  BYUNG-KI LEE ,  YONGHWA LEE ,  JOOYOUNG HWANG

IPC: G06F3/06

Abstract: An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command The first KV command and the second KV command are KV commands of a same type.