公开(公告)号：US20210334033A1

公开(公告)日：2021-10-28

申请号：US17090726

申请日：2020-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHYE CHO ,  KIJUN LEE ,  SUNG-RAE KIM ,  CHANKI KIM ,  YEONGGEOL SONG ,  YESIN RYU ,  JAEYOUN YOUN ,  MYUNGKYU LEE

IPC: G06F3/06

Abstract: A method for reading data from a memory includes; reading a codeword from the memory cells, correcting the errors when a number of errors in the codeword is less than a maximum number of correctable errors, correcting the errors when the number of errors in the codeword is equal to the maximum number of correctable errors and the errors correspond to a same sub-word line, and outputting signal indicating that the errors are an uncorrectable error when the number of errors of the codeword is equal to the maximum number of correctable errors and the errors correspond to different sub-word lines.