公开(公告)号：US20190303226A1

公开(公告)日：2019-10-03

申请号：US16218720

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINSU KIM ,  JISEOK KANG ,  MINSOO KIM ,  BYUNGJIK KIM ,  WONJAE SHIN ,  DONGHOON LEE ,  YEONHWA LEE ,  HO-YOUNG LEE ,  YOUJIN JANG ,  INSU CHOI

IPC: G06F11/07 ,  G06F12/0804 ,  G06F12/02

Abstract: A semiconductor memory module may include a random access memory, a nonvolatile memory, a buffer memory, and a controller configured to execute a reading operation on the buffer memory in response to an activation of a control signal. The controller may be further configured to execute a flush operation of storing first data, which are stored in the random access memory, in the nonvolatile memory, according to a result of the reading operation.