公开(公告)号：US20230253267A1

公开(公告)日：2023-08-10

申请号：US18149974

申请日：2023-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungkee CHOI ,  Sangwoo PARK ,  Woonhyuk CHOI

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/34

Abstract: A semiconductor device may include a metal pattern in a device region of a substrate, and a macro pattern structure in a scribe lane region of the substrate. The macro pattern structure may include a plurality of types of macro patterns. Each type of macro pattern may include a color 1 pattern and a color 2 pattern adjacent to the color 1 pattern. The color 1 pattern and the color 2 pattern may include conductive lines extending in a first direction parallel to a surface of the substrate. The color 1 pattern and color 2 pattern may be alternately arranged in a second direction perpendicular to the first direction and parallel to the surface of the substrate.