公开(公告)号：US10821572B2

公开(公告)日：2020-11-03

申请号：US15926244

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hoon Jeong ,  Sang-Hak Lee ,  Geun-Kyu Choi ,  Chang-Sun Hwang ,  Tae-Young Kwon ,  Young-Sang Kim ,  Hyung-Kyu Jin ,  Jeong-Nam Han

IPC: B24B37/00 ,  B24B37/015 ,  B24B55/02 ,  B24B49/14 ,  B24B37/26

Abstract: A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.