公开(公告)号：US12132154B2

公开(公告)日：2024-10-29

申请号：US17483118

申请日：2021-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Daesup Kim ,  Dongmyung Shin ,  Wooseok Jang ,  Sunhwan Hwang

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/504 ,  H01L33/0095 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0041

Abstract: A semiconductor light emitting device is provided. The device includes: an LED chip having a lower surface, an upper surface, and a side surface between the upper surface and the lower surface; first and second conductive bumps disposed on first and second conductive bumps provided on the lower surface; a first wavelength conversion layer having a first region provided on the upper surface of the LED chip and a second region which extends past the side surface of the LED chip; a second wavelength conversion layer having a first surface contacting the side surface of the LED chip, a second surface, a third surface connecting the first surface and the second surface, and contacting the second region, and a fourth surface located opposite to the third surface and inclined; and a reflective resin portion provided on the lower surface of the LED chip and the fourth surface.

公开(公告)号：US11700795B2

公开(公告)日：2023-07-18

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32 ,  F21Y115/10

CPC classification number: A01G7/045 ,  F21K9/64 ,  H01L33/06 ,  H01L33/32 ,  H01L33/504 ,  H01L33/507 ,  F21Y2115/10

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.

公开(公告)号：US20220354062A1

公开(公告)日：2022-11-10

申请号：US17574149

申请日：2022-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkuk Lee ,  Kunyoo Ko ,  Daesup Kim ,  Jaechul Kim ,  Sunhwan Hwang

IPC: A01G7/04 ,  F21K9/64 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 μmol/J or more.