公开(公告)号：US20230005713A1

公开(公告)日：2023-01-05

申请号：US17552698

申请日：2021-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Dougyong SUNG ,  Taekjoon RHEE ,  Sungwook HONG ,  Hakyoung KIM ,  Sangmin JEONG

IPC: H01J37/32 ,  C23C16/02

Abstract: A method of manufacturing a semiconductor device includes: providing a first process gas including oxygen and a second process gas including carbon and fluorine to a process chamber at a first flow rate ratio to etch an etch target layer; and providing the first process gas and the second process gas to the process chamber at a second flow rate ratio to passivate the etch target layer, wherein a flow rate of the first process gas is substantially constant.