公开(公告)号：US10608037B2

公开(公告)日：2020-03-31

申请号：US15854356

申请日：2017-12-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Won Lee ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC分类号： H01L27/148 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

摘要： This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

公开(公告)号：US20220285418A1

公开(公告)日：2022-09-08

申请号：US17825059

申请日：2022-05-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Won Lee ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC分类号： H01L27/146 ,  H04N5/3745

摘要： This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

公开(公告)号：US20220231073A1

公开(公告)日：2022-07-21

申请号：US17717422

申请日：2022-04-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JI-WON LEE ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC分类号： H01L27/146 ,  H04N5/3745

摘要： This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

公开(公告)号：US11302737B2

公开(公告)日：2022-04-12

申请号：US16797193

申请日：2020-02-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Won Lee ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC分类号： H01L27/146 ,  H04N5/3745

摘要： This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

公开(公告)号：US20180182804A1

公开(公告)日：2018-06-28

申请号：US15854356

申请日：2017-12-26

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Won Lee ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/14641 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643

摘要： This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.