公开(公告)号：US20150221823A1

公开(公告)日：2015-08-06

申请号：US14513026

申请日：2014-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Won HWANG ,  Je Won KIM ,  Il Ho AHN ,  Soo Jeong CHOI

IPC: H01L33/08 ,  F21V19/00 ,  F21V8/00 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/08 ,  F21K9/232 ,  F21S41/147 ,  F21S45/43 ,  F21S45/47 ,  F21V19/001 ,  F21Y2101/00 ,  F21Y2115/10 ,  G02B6/0073 ,  H01L33/007 ,  H01L33/16 ,  H01L33/24

Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 提供一种半导体发光器件，包括：第一导电型半导体基底层; 掩模层，其设置在所述第一导电型半导体基底层上并且包括具有暴露所述第一导电型半导体基底层的多个开口的石墨烯层; 以及设置在所述开口上并且各自包括第一导电型半导体芯，有源层和第二导电型半导体层的多个发光纳米结构。