公开(公告)号：US20240203701A1

公开(公告)日：2024-06-20

申请号：US18523234

申请日：2023-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soonku Kwon ,  Sunggil Kang ,  Chanyeong Jeong ,  Jeongmin Bang ,  Yeongkwang Lee ,  Ilgon Choi

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32422 ,  H01J2237/002

Abstract: A substrate processing apparatus includes a chamber including a first space and a second space, a substrate support in the first space and configured to support a substrate, a plasma source configured to generate plasma in the second space, an ion blocker between the second space and the first space, the ion blocker including through-holes configured to pass therethrough radicals of the plasma from the second space to the first space and provide the radicals to the substrate, and a temperature controller including a plurality of heaters connected to the ion blocker, one or more chillers, and a controller configured to control output of the plurality of heaters and output of the one or more chillers, where the ion blocker includes a plurality of regions, each of the plurality of regions including a heating line, one or more boundary regions.