公开(公告)号：US20240341081A1

公开(公告)日：2024-10-10

申请号：US18388295

申请日：2023-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjun LEE ,  Keunnam KIM ,  Seungmuk KIM ,  Kiseok LEE

IPC: H10B12/00 ,  G11C5/06

CPC classification number: H10B12/315 ,  G11C5/063 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488 ,  H10B12/50

Abstract: A semiconductor device which includes a semiconductor substrate having a cell area and a peripheral area, the peripheral area including a first area and a second area adjacent to each other, first transistors on the first area, a first wiring layer on the first transistors, a first pad on the second area and a portion of the first area, a first contact plug between the first wiring layer and the first area, a second contact plug between the first pad and the first area, a second pad on the first wiring layer, a third contact plug between the second pad and the first wiring layer, and a plurality of first capacitors on the second pad and that vertically overlap the first transistors, thus reliability and electrical characteristics of the semiconductor device may be increased.