公开(公告)号：US12250807B2

公开(公告)日：2025-03-11

申请号：US17496498

申请日：2021-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesan Kim ,  Seunghan Woo ,  Haesuk Lee ,  Youngcheon Kwon ,  Reum Oh

IPC: H10B12/00 ,  H01L23/48 ,  H01L23/528 ,  H01L29/8605 ,  H01L29/94

Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.

公开(公告)号：US20220130841A1

公开(公告)日：2022-04-28

申请号：US17496498

申请日：2021-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesan Kim ,  Seunghan Woo ,  Haesuk Lee ,  Youngcheon Kwon ,  Reum Oh

IPC: H01L27/108 ,  H01L23/48 ,  H01L23/528 ,  H01L29/8605 ,  H01L29/94

Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.