公开(公告)号：US20210242079A1

公开(公告)日：2021-08-05

申请号：US17215365

申请日：2021-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Keun KIM ,  Jae Wha PARK ,  Jun Kwan KIM ,  Hyo Jeong MOON ,  Seung Jong PARK ,  Seul Gi BAE

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

公开(公告)号：US20200027783A1

公开(公告)日：2020-01-23

申请号：US16271120

申请日：2019-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Keun KIM ,  Jae Wha PARK ,  Jun Kwan KIM ,  Hyo Jeong MOON ,  Seung Jong PARK ,  Seul Gi BAE

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.