公开(公告)号：US10811541B2

公开(公告)日：2020-10-20

申请号：US16254842

申请日：2019-01-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin Bum Kim ,  Hyoung Sub Kim ,  Seong Heum Choi ,  Jin Yong Kim ,  Tae Jin Park ,  Seung Hun Lee

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/30

摘要： A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.