公开(公告)号：US20210382772A1

公开(公告)日：2021-12-09

申请号：US17205687

申请日：2021-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon KIM ,  Seonghun Kim ,  Jongsung Na ,  Seona Cho

IPC: G06F11/07

Abstract: Provided are a memory controller, a method of operating the memory controller, and a storage device including the memory controller. The method includes performing a first operation on a non-volatile memory; storing a first code path corresponding to pieces of codes executed as the first operation is performed in a history buffer; comparing the first code path with a plurality of reference code paths related to the first operation; and identifying whether the first operation is abnormally performed based on a result of the comparison.

公开(公告)号：US11650873B2

公开(公告)日：2023-05-16

申请号：US17205687

申请日：2021-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon Kim ,  Seonghun Kim ,  Jongsung Na ,  Seona Cho

IPC: G06F11/07 ,  G06F11/30 ,  G06N20/00

CPC classification number: G06F11/079 ,  G06F11/0727 ,  G06F11/0751 ,  G06F11/0775 ,  G06F11/3034 ,  G06N20/00

Abstract: Provided are a memory controller, a method of operating the memory controller, and a storage device including the memory controller. The method includes performing a first operation on a non-volatile memory; storing a first code path corresponding to pieces of codes executed as the first operation is performed in a history buffer; comparing the first code path with a plurality of reference code paths related to the first operation; and identifying whether the first operation is abnormally performed based on a result of the comparison.