公开(公告)号：US20210335601A1

公开(公告)日：2021-10-28

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  G03F1/26

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

公开(公告)号：US11837470B2

公开(公告)日：2023-12-05

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L21/0275 ,  G03F1/26 ,  G03F7/201 ,  H01L21/02603 ,  H01L21/02642 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.