公开(公告)号：US20210202311A1

公开(公告)日：2021-07-01

申请号：US17026525

申请日：2020-09-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkuk KIM ,  Yunseung KANG ,  Oik KWON ,  Jungik OH ,  Sujin JEON

IPC: H01L21/768 ,  H01L27/24 ,  H01L27/22 ,  H01L43/12 ,  H01L45/00

Abstract: A memory device including a plurality of first conductive lines arranged on a substrate and spaced apart from each other in a first direction parallel to a top surface of the substrate; a plurality of capping liners on sidewalls of each of the plurality of first conductive lines, the plurality of capping liners having top surfaces at a vertical level equal to top surfaces of the plurality of first conductive lines, and bottom surfaces at a vertical level higher than bottom surfaces of the plurality of first conductive lines; and an insulating layer on the substrate, the insulating layer filling spaces between the plurality of first conductive lines and covering sidewalls of the plurality of capping liners.