公开(公告)号：US20250079238A1

公开(公告)日：2025-03-06

申请号：US18762397

申请日：2024-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Uihyoung LEE ,  Sang Ho JIN ,  Jongguk PARK ,  Yujin KIM ,  Hakyung YUN ,  Wonhee LEE

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device is provided. The method includes: providing an interlayer dielectric layer with a trench on a substrate in a first substrate processing apparatus in a vacuum state; forming a first metal barrier in the trench while the substrate is in the first substrate processing apparatus; unloading the substrate from the first substrate processing apparatus and exposing the substrate to a non-vacuum environment; providing the substrate in a second substrate processing apparatus of a vacuum state; forming a second metal barrier in the trench in the second substrate processing apparatus; and forming a metal pattern to fill the trench.