-
公开(公告)号:US20250122079A1
公开(公告)日:2025-04-17
申请号:US18677245
申请日:2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myungbeom PARK , Sungbae KIM , Jongsoo KIM , Samjong CHOI
IPC: C01B23/00
Abstract: A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.
-
2.
公开(公告)号:US20250153305A1
公开(公告)日:2025-05-15
申请号:US18946379
申请日:2024-11-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yehwan KIM , Ungyu PAIK , Samjong CHOI , Taeseup SONG , Ganggyu LEE , Donghwan KIM
Abstract: A chemical mechanical polishing pad includes a body having a cylindrical shape and extending in a vertical direction, the body including a plurality of first grooves extending downward in the vertical direction from an upper surface of the body, and a plurality of second grooves extending downward in the vertical direction inside the body. Each of the plurality of first grooves is exposed upward in the vertical direction from the upper surface of the body, each of the plurality of second grooves is located inside the body such that upper ends of the plurality of second grooves is below the upper surface of the body, and at least two of the plurality of first grooves have different depths from each other.
-