公开(公告)号：US20250151279A1

公开(公告)日：2025-05-08

申请号：US18668971

申请日：2024-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNHYOUNG KIM ,  JIYOUNG KIM ,  IK-HYUNG JOO ,  SUKKANG SUNG ,  SEHOON LEE

IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device includes a semiconductor substrate, and a first transistor disposed on the semiconductor substrate. The first transistor includes an insulation structure disposed on the semiconductor substrate, a channel region disposed on the insulation structure and including a first semiconductor layer, and extending in a direction crossing the semiconductor substrate, first source and drain regions electrically connected to the channel region, a first gate insulating layer disposed on the channel region, and a first gate electrode disposed on the first gate insulating layer. A first region that is one of the first source and drain regions and a second region that is another one of the first source and drain regions include different materials or have different crystal structures.