公开(公告)号：US20250069668A1

公开(公告)日：2025-02-27

申请号：US18814030

申请日：2024-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Rockhyun Baek ,  Kihoon Nam

IPC: G11C16/12 ,  G11C16/04 ,  G11C16/32

Abstract: A memory device, including: a memory cell array including a plurality of cell strings; a voltage generator configured to generate a precharge voltage, a program voltage, and a negative voltage; and a control logic circuit configured to control a program operation for programming a threshold voltage of a selected memory cell to have a target state, wherein the program operation is performed using a plurality of program loops, based on a voltage increment of the program voltage, and wherein each program loop from among the plurality of program loops includes a precharge duration and a program execution duration, wherein the control logic circuit is further configured to provide the negative voltage to a plurality of unselected string select transistors and a plurality of unselected ground select transistors included in a plurality of unselected cell strings from among the plurality of cell strings, during the program execution duration.