公开(公告)号：US20140252369A1

公开(公告)日：2014-09-11

申请号：US14160629

申请日：2014-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hoon LEE ,  Chan-ho PARK ,  Nam-young LEE

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/66462

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract translation: 一种氮化物系半导体器件，包括：衬底; 在该衬底上的含GaN层; GaN层上的含氮化物层; 在所述含氮化物层上的沟道阻挡层，所述沟道阻挡层包括氮化物基半导体; 沟道阻挡层上的栅极绝缘层; 以及栅极绝缘层上的栅电极。