公开(公告)号：US11482653B2

公开(公告)日：2022-10-25

申请号：US16264043

申请日：2019-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Kuk Lee ,  Dae Young Lee ,  Moon Sub Kim ,  Sung Jin Ahn ,  Seung Hwan Lee ,  Dong Kyun Yim ,  Woo Seok Jang

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32

Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.