公开(公告)号：US20250133746A1

公开(公告)日：2025-04-24

申请号：US18745377

申请日：2024-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho SONG ,  Sunmin MOON ,  Jaewan CHANG

IPC: H10B53/30

Abstract: A semiconductor device includes a capacitor structure including a bottom electrode, a first dielectric layer on the bottom electrode, a second dielectric layer on the first dielectric layer, a third dielectric layer on the second dielectric layer, and a top electrode on the third dielectric layer, where each of the first dielectric layer and the third dielectric layer includes zirconium oxide, the second dielectric layer includes hafnium-zirconium oxide, and each of the first dielectric layer, the second dielectric layer, and the third dielectric layer includes a first crystal phase and a second crystal phase.