公开(公告)号：US20230089688A1

公开(公告)日：2023-03-23

申请号：US17705991

申请日：2022-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNHYEOK AHN ,  HUIJUNG KIM ,  KISEOK LEE ,  MYEONGDONG LEE

IPC: H01L27/108

Abstract: A semiconductor device includes; an active region defined by an isolation film on a substrate, a word line in the substrate, the word line extending in a first direction and crossing the active region, a bit line above the word line and extending in a second direction, a contact between bit lines adjacent in the first direction, the contact connecting the active region and extending in a vertical direction, and a contact fence disposed on each of opposing side surfaces of the contact in the second direction and extending in the vertical direction, wherein the active region has a bar shape extending oblique to the first direction, and the contact fence includes a carbon-containing insulating film.