公开(公告)号：US20220149153A1

公开(公告)日：2022-05-12

申请号：US17587444

申请日：2022-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Jung KIM ,  Kyu Jin KIM ,  Sang-Il HAN ,  Kyu Hyun LEE ,  Woo Young CHOI ,  Yoo Sang HWANG

IPC: H01L29/06 ,  H01L29/423

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

公开(公告)号：US20210257374A1

公开(公告)日：2021-08-19

申请号：US17035082

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS co., LTD.

Inventor： KI SEOK LEE ,  Jae Hyun YOON ,  Kyu Jin KIM ,  Keun Nam KIM ,  Hui-Jung KIM ,  Kyu Hyun LEE ,  SANG-IL HAN ,  Sung Hee HAN ,  Yoo Sang HWANG

IPC: H01L27/108

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

公开(公告)号：US20210126090A1

公开(公告)日：2021-04-29

申请号：US16897492

申请日：2020-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Jung KIM ,  Kyu Jin KIM ,  Sang-Il HAN ,  Kyu Hyun LEE ,  Woo Young CHOI ,  Yoo Sang HWANG

IPC: H01L29/06 ,  H01L29/423

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.