公开(公告)号：US12271288B2

公开(公告)日：2025-04-08

申请号：US18190350

申请日：2023-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihun Jung ,  Kyeonghwan Jung ,  Changhyeon Chae ,  Jaeook Kwon ,  Jusun Song ,  Jaehoon Jeong ,  Youngho Choi

IPC: G06F11/36 ,  G06F11/07 ,  G06F11/362

Abstract: A memory operation device and method for operating a memory in an electronic device. The electronic device may determine whether a memory leak occurs in one or more low-order stack trace items with a count value of n among collected stack trace items, n being a positive integer, and, based on a low-order stack trace item among the collected stack trace items being determined as causing a memory leak, proceeding to a next order of the collected stack trace items to thereby determine whether a memory leak occurs in one or more high-order stack trace items with a count value of m which is a positive integer higher than n). When m is a maximum count value among the collected stack trace items, memory debugging may be performed using a high-order stack trace item, among the one or more high-order stack trace items, causing the memory leak.