公开(公告)号：US11289309B2

公开(公告)日：2022-03-29

申请号：US16407988

申请日：2019-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung Jun Kim ,  Kwang Nam Kim ,  Sung Yeon Kim ,  Jong Woo Sun ,  Sang Rok Oh ,  Jung Pyo Hong

IPC: H01J37/32

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

公开(公告)号：US11837496B2

公开(公告)日：2023-12-05

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11791194B2

公开(公告)日：2023-10-17

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68735 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/6875

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US11018046B2

公开(公告)日：2021-05-25

申请号：US16559762

申请日：2019-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo Sun ,  Sung Moon Park ,  Je Woo Han ,  Kwang Nam Kim ,  Ho Chang Lee ,  Young Hoon Jeong ,  Masayuki Tomoyasu

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.