SUBSTRATE DRYING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING SAME

    公开(公告)号:US20220189765A1

    公开(公告)日:2022-06-16

    申请号:US17357632

    申请日:2021-06-24

    Abstract: A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

Patent Agency Ranking