公开(公告)号：US20240021664A1

公开(公告)日：2024-01-18

申请号：US18221495

申请日：2023-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junrak CHOI ,  Yaejin HONG ,  Jinsu LEE ,  Hongsik CHAE

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/485 ,  H10B12/482 ,  H10B12/315 ,  H01L28/90

Abstract: A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. Each of the lower electrodes includes a first electrode layer having a cylindrical shape, a first insertion layer disposed on the first electrode layer and having a cylindrical shape, a second electrode layer disposed on the first insertion layer and extending to cover an upper end of the first electrode layer and an upper end of the first insertion layer. At least one of the first electrode layer and the second electrode layer has a first stress, and the first insertion layer has a second stress, different from the first stress. The first stress is one of tensile stress and compressive stress, and the second stress is the other of the tensile stress and the compressive stress.