公开(公告)号：US20140203304A1

公开(公告)日：2014-07-24

申请号：US14095445

申请日：2013-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-hyun KIM ,  Wan-jong KIM ,  Jung-jin KIM ,  Jung-kyu PARK ,  Kyu-ho JANG

IPC: H01L33/52 ,  H05K7/00 ,  H01L27/15

CPC classification number: B29C45/0046 ,  B29C45/14639 ,  B29C2045/0089 ,  B29C2045/2691 ,  B29L2011/00 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: Provided is a light-emitting device package strip that includes a lead frame strip, a plurality of resin molding products that are injection-molded in the lead frame strip, and runner and gate members that are formed between adjacent resin molding products and on end sides of a line of adjacent resin molding products, each runner and gate member having a smaller thickness than a thickness of the resin molding products to facilitate cutting thereof.

Abstract translation: 提供一种发光器件封装条，其包括引线框带，在引线框带中注塑成型的多个树脂成型产品，以及形成在相邻树脂成型体之间和端侧的流道和浇口构件 的一条相邻的树脂成型制品，每个浇道和浇口构件的厚度小于树脂模塑制品的厚度，以便切割它们。

公开(公告)号：US20170365745A1

公开(公告)日：2017-12-21

申请号：US15626410

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-seok YANG ,  Jin-bock LEE ,  Jung-hee KWAK ,  Jung-kyu PARK ,  Jung-sung KIM

IPC: H01L33/44 ,  H01L33/36

CPC classification number: H01L33/44 ,  H01L33/36 ,  H01L33/38

Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

公开(公告)号：US20170263808A1

公开(公告)日：2017-09-14

申请号：US15357395

申请日：2016-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-sung HYUN ,  Dong-yul LEE ,  Jung-kyu PARK

IPC: H01L33/00

CPC classification number: H01L33/0062 ,  H01L33/0095 ,  H01L33/025

Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation. The p-type semiconductor layer may include magnesium-hydrogen (Mg—H) complexes at a concentration of about 1×1017 atoms/cm3 to about 1×1018 atoms/cm3.