公开(公告)号：US09793347B2

公开(公告)日：2017-10-17

申请号：US14931427

申请日：2015-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Jin Lee ,  Sang-Hoon Ahn ,  Gil-Heyun Choi ,  Jong-Won Hong

IPC: H01L29/06 ,  H01L27/02 ,  H01L21/768 ,  H01L21/764

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76831

Abstract: A semiconductor device includes a substrate, a conductive pattern, a side spacer, and an air gap. The substrate includes an interlayer insulating layer and a trench penetrating the interlayer insulating layer. The conductive pattern is disposed within the trench of the substrate. The side spacer is disposed within the trench. The side spacer covers an upper side surface of the conductive pattern. The air gap is disposed within the trench. The air gap is bounded by a sidewall of the trench, the side spacer, and a lower side surface of the conductive pattern. A level of a bottom surface of the conductive pattern is lower than a level of bottom surfaces of the side spacer.

公开(公告)号：US09754826B2

公开(公告)日：2017-09-05

申请号：US15155478

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won Hong ,  Hei-Seung Kim ,  Kyoung-Hee Nam ,  In-Sun Park ,  Jong-Myeong Lee

IPC: H01L21/763 ,  H01L21/768 ,  H01L23/532 ,  H01L27/11529 ,  H01L21/288 ,  H01L27/108

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/11529 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.

公开(公告)号：US09214381B2

公开(公告)日：2015-12-15

申请号：US14165817

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Jin Lee ,  Sang-Hoon Ahn ,  Gil-Heyun Choi ,  Jong-Won Hong

IPC: H01L21/70 ,  H01L21/768 ,  H01L29/76 ,  H01L29/788 ,  H01L21/764

CPC classification number: H01L29/0649 ,  H01L21/764 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76831

Abstract: A semiconductor device includes a substrate, a conductive pattern, a side spacer, and an air gap. The substrate includes an interlayer insulating layer and a trench penetrating the interlayer insulating layer. The conductive pattern is disposed within the trench of the substrate. The side spacer is disposed within the trench. The side spacer covers an upper side surface of the conductive pattern. The air gap is disposed within the trench. The air gap is bounded by a sidewall of the trench, the side spacer, and a lower side surface of the conductive pattern. A level of a bottom surface of the conductive pattern is lower than a level of bottom surfaces of the side spacer.

Abstract translation: 半导体器件包括衬底，导电图案，侧面间隔物和气隙。 衬底包括层间绝缘层和贯穿层间绝缘层的沟槽。 导电图案设置在基板的沟槽内。 侧间隔件设置在沟槽内。 侧隔板覆盖导电图案的上侧表面。 气隙设置在沟槽内。 气隙由沟槽的侧壁，侧面间隔物和导电图案的下侧表面限定。 导电图案的底面的水平比侧面间隔物的底面的水平低。