-
公开(公告)号：US10825819B2
公开(公告)日：2020-11-03
申请号：US16437620
申请日：2019-06-11
发明人： Hyo Sub Kim , Hui Jung Kim , Myeong Dong Lee , Jin Hwan Chun
IPC分类号： H01L27/108 , H01L29/66
摘要： A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.
-
公开(公告)号：US11282841B2
公开(公告)日：2022-03-22
申请号：US17037851
申请日：2020-09-30
发明人： Hyo Sub Kim , Hui Jung Kim , Myeong Dong Lee , Jin Hwan Chun
IPC分类号： H01L27/108 , H01L29/66
摘要： A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.
-
搜索结果
2 条记录 (耗时 0.012 秒)
