公开(公告)号：US20220139954A1

公开(公告)日：2022-05-05

申请号：US17575947

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo-Heon KANG ,  Tae Hun KIM ,  Jae Ryong SIM ,  Kwang Young JUNG ,  Gi Yong CHUNG ,  Jee Hoon HAN ,  Doo Hee HWANG

IPC: H01L27/11582 ,  H01L27/1157

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.