公开(公告)号：US20220302274A1

公开(公告)日：2022-09-22

申请号：US17580847

申请日：2022-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUYOUN KIM ,  HYUNG JONG LEE ,  SEULGI YUN ,  SEKI HONG

IPC: H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a first active pattern on a substrate. The first active pattern includes a pair of first source/drain patterns and a first channel pattern therebetween. A gate electrode is disposed on the first channel pattern, and a first gate spacer is disposed on a side surface of the gate electrode. The first gate spacer includes a first spacer and a second spacer. A top surface of the first spacer is lower than a top surface of the second spacer. A first blocking pattern is disposed on the first spacer, and a gate contact is coupled to the gate electrode. The first blocking pattern is interposed between the gate contact and the second spacer.

公开(公告)号：US20230253264A1

公开(公告)日：2023-08-10

申请号：US18300983

申请日：2023-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGMIN YOO ,  JUYOUN KIM ,  HYUNGJOO NA ,  BONGSEOK SUH ,  JOOHO JUNG ,  EUICHUL HWANG ,  SUNGMOON LEE

IPC: H01L21/8238 ,  H01L27/118 ,  H01L21/762

CPC classification number: H01L21/823878 ,  H01L27/11807 ,  H01L21/76224 ,  H01L2027/11861 ,  H01L2027/11829 ,  H01L2027/11816

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US20210257264A1

公开(公告)日：2021-08-19

申请号：US17246778

申请日：2021-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGMIN YOO ,  JUYOUN KIM ,  HYUNGJOO NA ,  BONGSEOK SUH ,  JOOHO JUNG ,  EUICHUL HWANG ,  SUNGMOON LEE

IPC: H01L21/8238 ,  H01L27/118 ,  H01L21/762

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.