公开(公告)号：US20210210342A1

公开(公告)日：2021-07-08

申请号：US16925532

申请日：2020-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNYEONG LEE ,  MINKYU PARK ,  INSUN YI ,  BEOMSEOK KIM ,  YOUNGSEOK KIM ,  KUNTACK LEE

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/108 ,  H01L27/115 ,  H01J37/32 ,  C23C16/511 ,  C23C16/46 ,  C23C16/40

Abstract: A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2)