公开(公告)号：US20250169096A1

公开(公告)日：2025-05-22

申请号：US18671507

申请日：2024-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjun LEE ,  Boram KIM ,  JONGSEOB KIM ,  JONGUK SEO ,  JUNGSEUNG YANG ,  JAEJOON OH ,  YONGSEOK CHOI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment includes: a channel layer; a barrier layer above the channel layer and including a material having an energy band gap different from an energy band gap of the channel layer; a gate electrode above the barrier layer; a gate semiconductor layer between the barrier layer and the gate electrode; a source electrode and a drain electrode that are at both sides of the gate electrode and covering side surfaces of the channel layer and the barrier layer; and a superlattice layer between the barrier layer and the gate semiconductor layer, the superlattice layer including at least one first layer including AlGaN and at least one second layer including GaN, wherein the at least one first layer and the at least one second layer are alternately stacked.