公开(公告)号：US20240306371A1

公开(公告)日：2024-09-12

申请号：US18462553

申请日：2023-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HAEIN JUNG ,  SUNGHO JANG ,  JISEOK KWON ,  SEUNG HWAN KIM ,  SEUNGHO HONG

IPC: H10B12/00

CPC classification number: H10B12/36 ,  H10B12/315 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes a semiconductor substrate including a first semiconductor material, a gate structure on the semiconductor substrate, and a semiconductor pattern including a second semiconductor material, between the semiconductor substrate and the gate structure. The semiconductor pattern is in contact with the semiconductor substrate, the gate structure passes through a portion of the semiconductor pattern, and is spaced apart from the semiconductor substrate, and the first semiconductor material is different from the second semiconductor material.