公开(公告)号：US20190229138A1

公开(公告)日：2019-07-25

申请号：US16218704

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang Sun LEE ,  Seung Ho SHIN ,  Hyung Jin BAE ,  Jin Ho SEO ,  Ji Hun SHIN ,  Moo Sup LIM ,  Young Tae JANG ,  Young Kyun JEONG

IPC: H01L27/146 ,  H04N5/355

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.

公开(公告)号：US20220059588A1

公开(公告)日：2022-02-24

申请号：US17521218

申请日：2021-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kang Sun LEE ,  Seung Ho SHIN ,  Hyung Jin BAE ,  Jin Ho SEO ,  Ji Hun SHIN ,  Moo Sup LIM ,  Young Tae JANG ,  Young Kyun JEONG

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/353 ,  H04N5/3745

Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.