公开(公告)号：US20220115377A1

公开(公告)日：2022-04-14

申请号：US17331725

申请日：2021-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyokyoung KIM ,  Jamin KOO ,  Jonghyeok KIM ,  Daeyoung MOON

IPC: H01L27/108 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including an isolation layer pattern and an active pattern, a buffer insulation layer pattern on the substrate, a polysilicon structure on the active pattern and the buffer insulation layer pattern, the polysilicon structure contacting a portion of the active pattern, and the polysilicon structure extending in a direction parallel to an upper surface of the substrate, a first diffusion barrier layer pattern on an upper surface of the polysilicon structure, the first diffusion barrier layer pattern including polysilicon doped with at least carbon, a second diffusion barrier layer pattern on the first diffusion barrier layer pattern, the second diffusion barrier layer pattern including at least a metal, and a first metal pattern and a first capping layer pattern stacked on the second diffusion barrier layer pattern.