公开(公告)号：US20210384100A1

公开(公告)日：2021-12-09

申请号：US17307181

申请日：2021-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Chang RYU ,  Chulwoo KIM ,  Juhyun LYU ,  Sanghyun LEE ,  Yun Seok CHOI

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor package includes a first substrate, a first chip structure and a second chip structure spaced apart from each other on the first substrate, a gap region being defined between the first and second chip structures, and a heat dissipation member covering the first chip structure, the second chip structure, and the first substrate, the heat dissipation member including a first trench in an inner top surface of the heat dissipation member, wherein the first trench vertically overlaps with the gap region and has a width greater than a width of the gap region, and wherein the first trench vertically overlaps with at least a portion of a top surface of the first chip structure or a portion of a top surface of the second chip structure.