公开(公告)号：US11302384B2

公开(公告)日：2022-04-12

申请号：US16931933

申请日：2020-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chulung Kim ,  Joungyeal Kim ,  Seongheon Yu ,  Hyunjin Ko ,  Wooil Kim ,  Hyeonsoo Sim

IPC: G11C11/4093 ,  G11C11/4096 ,  G06F13/40 ,  G06F13/16 ,  H01L25/065 ,  H01L25/18

Abstract: In a method of controlling on-die termination (ODT) in a memory system including a plurality of memory units that shares a data bus to transfer data, ODT circuits of the plurality of memory units are enabled into an initial state, a resistance value of the ODT circuit is set to a first resistance value, of at least one write non-target memory unit among the plurality of memory units during a write operation on a write target memory unit among the plurality of memory units, and a resistance value of the ODT circuit is set to a second resistance value, of at least one read non-target memory unit among the plurality of memory units during a read operation on a read target memory unit among the plurality of memory units.