公开(公告)号：US20240347563A1

公开(公告)日：2024-10-17

申请号：US18386871

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junoh KIM ,  Munhwan KIM ,  Hyeonseop Yoo

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603

Abstract: An image sensor includes a substrate, a polysilicon-vertical gate, a photoelectric conversion element, a channel, and a floating diffusion region. The substrate has a front surface and a back surface that opposes the front surface. The polysilicon-vertical gate is disposed in an upper region adjacent to the front surface of the substrate and extends into the substrate. The photoelectric conversion element is disposed at a lower position within the substrate with respect to the polysilicon-vertical gate. The channel is disposed adjacent to the polysilicon-vertical gate and doped with dopants of a same conductivity type as the photoelectric conversion element. The floating diffusion region is disposed in the upper region of the substrate and adjacent to the polysilicon-vertical gate in a first parallel direction that is parallel to the front surface of the substrate. The polysilicon-vertical gate, the photoelectric conversion element, and the floating diffusion region constitute a junctionless transfer transistor.