Storage device and data access method thereof

    公开(公告)号:US12293095B2

    公开(公告)日:2025-05-06

    申请号:US18517307

    申请日:2023-11-22

    Inventor: Hao Yan

    Abstract: A storage device includes: a NAND chip array having a plurality of NAND chips; a ZONE switcher configured to control output of write data to a ZONE cache when a ZONE write command is received; the ZONE cache configured to cache the write data in a cache space corresponding to a ZONE among a plurality of zones; and a ZONE persistence controller configured to control storing, in parallel, the write data in at least two of the plurality of ZONEs cached in the ZONE cache in NAND chips of the NAND chip array corresponding to the plurality of ZONEs.

    STORAGE DEVICE AND DATA ACCESS METHOD THEREOF

    公开(公告)号:US20250068343A1

    公开(公告)日:2025-02-27

    申请号:US18517307

    申请日:2023-11-22

    Inventor: Hao Yan

    Abstract: A storage device includes: a NAND chip array having a plurality of NAND chips; a ZONE switcher configured to control output of write data to a ZONE cache when a ZONE write command is received; the ZONE cache configured to cache the write data in a cache space corresponding to a ZONE among a plurality of zones; and a ZONE persistence controller configured to control storing, in parallel, the write data in at least two of the plurality of ZONEs cached in the ZONE cache in NAND chips of the NAND chip array corresponding to the plurality of ZONEs.

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