公开(公告)号：US20190027649A1

公开(公告)日：2019-01-24

申请号：US15876435

申请日：2018-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon YOON ,  Jae-in SIM ,  Gi-bum KIM ,  Ha-yeong SON ,  Young-sub SHIN

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/60 ,  H01L21/02 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L51/5218 ,  H01L51/5234

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.